| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for pulling up a semiconductor single crystal capable of suppressing an influence exerted on a heater temperature from an unexpected disturbance generated during pulling-up, and to provide a pulling-up apparatus. <P>SOLUTION: A semiconductor single crystal 11 is pulled, while controlling a heater 18 based on a temperature profile set beforehand. Past pulling-up data of a single crystal contributing to setting the temperature profile of the heater 18 are accumulated in a database, and a temperature profile of the heater for a single crystal to be pulled next is evaluated from the past pulling-up data of the single crystal based on a first evaluation function. The temperature profile of the heater 18 for the single crystal to be pulled next is corrected before pulling up based on the first evaluation function, and the single crystal 11 is pulled, while controlling the heater 18 based on the corrected temperature profile. While pulling up the single crystal 11, the corrected temperature profile is further automatically corrected at every prescribed pulled-up length, and the single crystal 11 is pulled, while controlling the heater 18 based on the automatically corrected temperature profile. <P>COPYRIGHT: (C)2013,JPO&INPIT |
