STRUCTURES AND METHODS FOR PHOTO-PATTERNABLE LOW-k (PPLK) INTEGRATION

摘要

An interconnect structure is provided which includes at least one patterned and cured low-k material located directly on a surface of a substrate; and at least one least one conductively filled region embedded within an interconnect pattern located within the at least one patterned and cured low-k material, wherein the at least one conductively filled region has an inflection point at a lower region of the interconnect pattern that is in proximity to an upper surface of the substrate and the interconnect region having an upper region that has substantially straight sidewalls.