发明名称 |
Laser Annealing Method And Device |
摘要 |
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
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申请公布号 |
US2013005123(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213608818 |
申请日期 |
2012.09.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KAWAKAMI RYUSUKE;NISHIDA KENICHIROU;KAWAGUCHI NORIHITO;MASAKI MIYUKI;YOSHINOUCHI ATSUSHI |
发明人 |
KAWAKAMI RYUSUKE;NISHIDA KENICHIROU;KAWAGUCHI NORIHITO;MASAKI MIYUKI;YOSHINOUCHI ATSUSHI |
分类号 |
H01L21/268;B23K26/00 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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