SYSTEMS AND METHODS FOR CONTROLLING ETCH SELECTIVITY OF VARIOUS MATERIALS
摘要
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
申请公布号
WO2013003676(A2)
申请公布日期
2013.01.03
申请号
WO2012US44820
申请日期
2012.06.29
申请人
NOVELLUS SYSTEMS, INC.;JENG, ESTHER;CHANDRASHEKAR, ANAND;HUMAYUN, RAASHINA;DANEK, MICHAL;POWELL, RONALD
发明人
JENG, ESTHER;CHANDRASHEKAR, ANAND;HUMAYUN, RAASHINA;DANEK, MICHAL;POWELL, RONALD