RELIABILITY ASSESSMENT OF CAPACITOR DEVICE

摘要

A method of reliability testing of a semiconductor device is described. The embodiment, includes providing a capacitor including an insulating layer interposing two conductive layers. A plurality of voltages are provided to the capacitor including providing a first voltage and a second voltage greater than the first voltage. A leakage associated with the capacitor is measured while applying the second voltage. In an embodiment, the leakage measured while applying the second voltage indicates that a failure of the insulating layer of the capacitor has occurred. In an embodiment, the capacitor is an inter-digitated metal-oxide-metal (MOM) capacitor. The reliability testing may be correlated to TDDB test results. The reliability testing may be performed at a wafer-level.