发明名称 SPUTTERING APPARATUS AND SPUTTERING METHOD
摘要 A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.
申请公布号 US2013001075(A1) 申请公布日期 2013.01.03
申请号 US201113634328 申请日期 2011.03.16
申请人 MORIMOTO NAOKI;ISHIDA MASAHIKO 发明人 MORIMOTO NAOKI;ISHIDA MASAHIKO
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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