发明名称 |
SPUTTERING APPARATUS AND SPUTTERING METHOD |
摘要 |
A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.
|
申请公布号 |
US2013001075(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201113634328 |
申请日期 |
2011.03.16 |
申请人 |
MORIMOTO NAOKI;ISHIDA MASAHIKO |
发明人 |
MORIMOTO NAOKI;ISHIDA MASAHIKO |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|