发明名称 Co-Cr-Pt-B ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
摘要 <p>Provided is Co-Cr-Pt-B alloy sputtering target characterized in that there are no more than 10 cracks of 0.1 to 20 µm in a B-rich phase in a 100 µm × 100 µ area (field of view). This method for producing the Co-Cr-Pt-B alloy sputtering target is characterized in that: after a Co-Cr-Pt-B alloy cast ingot has been hot forged or hot rolled, hot rolling or hot forging is carried out to an elongation of 4% or less, and the ingot is machined and manufactured into a target having no more than 10 cracks of 0.1 to 20 µm in a B-rich phase in a 100 µm × 100 µm area (field of view); or, after hot rolling or hot forging the ingot, the ingot is rapidly cooled to -196°C to 100°C, machined and manufactured into a target. This target has a high leakage flux density and few microcracks in a B-rich layer, and thus stabilizes discharge and minimizes arcing.</p>
申请公布号 WO2013001943(A1) 申请公布日期 2013.01.03
申请号 WO2012JP63071 申请日期 2012.05.22
申请人 JX NIPPON MINING & METALS CORPORATION;MORISHITA YUTO;OGINO SHIN-ICHI;NAKAMURA YUICHIRO 发明人 MORISHITA YUTO;OGINO SHIN-ICHI;NAKAMURA YUICHIRO
分类号 C23C14/34;C22C19/07;C22C30/00;C22C30/02;C22F1/00;C22F1/10;C22F1/16;G11B5/851 主分类号 C23C14/34
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