SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.