发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region. |
申请公布号 |
US2013005096(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213368584 |
申请日期 |
2012.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK HEUNG-KYU;SONG WOO-BIN;KIM NAM-KYU;JUNG SU-JIN;LEE BYEONG-CHAN;KIM YOUNG-PIL;LEE SUN-GHIL |
发明人 |
PARK HEUNG-KYU;SONG WOO-BIN;KIM NAM-KYU;JUNG SU-JIN;LEE BYEONG-CHAN;KIM YOUNG-PIL;LEE SUN-GHIL |
分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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