LOW-PROFILE LOCAL INTERCONNECT AND METHOD OF MAKING THE SAME
摘要
<p>Embodiments of the present invention provide a structure. The structure includes a plurality of field-effect-transistors having gate stacks formed on top of a semiconductor substrate, the gate stacks having spacers formed at sidewalls thereof; and one or more conductive contacts formed directly on top of the semiconductor substrate and interconnecting at least one source/drain of one of the plurality of field-effect-transistors to at least one source/drain of another one of the plurality of field-effect- transistors, wherein the one or more conductive contacts is part of a low-profile local interconnect that has a height lower than a height of the gate stacks.</p>
申请公布号
WO2013002851(A1)
申请公布日期
2013.01.03
申请号
WO2012US28708
申请日期
2012.03.12
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;PONOTH, SHOM;HORAK, DAVID, V.;KOBURGER, CHARLES, W.;YANG, CHIH-CHAO