发明名称 |
METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS |
摘要 |
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
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申请公布号 |
US2013001752(A1) |
申请公布日期 |
2013.01.03 |
申请号 |
US201213415251 |
申请日期 |
2012.03.08 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY;WU YEWCHUNG SERMON;CHEN YU-CHUNG |
发明人 |
WU YEWCHUNG SERMON;CHEN YU-CHUNG |
分类号 |
H01L29/06;H01L21/26;H01L21/302 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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