发明名称 METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
摘要 The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
申请公布号 US2013001752(A1) 申请公布日期 2013.01.03
申请号 US201213415251 申请日期 2012.03.08
申请人 NATIONAL CHIAO TUNG UNIVERSITY;WU YEWCHUNG SERMON;CHEN YU-CHUNG 发明人 WU YEWCHUNG SERMON;CHEN YU-CHUNG
分类号 H01L29/06;H01L21/26;H01L21/302 主分类号 H01L29/06
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