| 摘要 |
A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that decreases when a voltage applied thereto increases. The high-selection-ratio element has a first resistance that is small when a voltage applied to the memory cell is approximately equal to a selection voltage of the memory cell, and has a second resistance that is substantially larger than the first resistance when the voltage applied to the memory cell is approximately equal to one-half of the selection voltage. |
