发明名称 |
SILICON OXIDE FILM FORMING METHOD, AND PLASMA OXIDATION APPARATUS |
摘要 |
A silicon oxide film forming method includes forming a silicon oxide film by allowing a plasma of a processing gas to react on a silicon exposed on a surface of a target object to be processed in a processing chamber of a plasma processing apparatus. The processing gas includes an ozone-containing gas having a volume ratio of O3 to a total volume of O2 and O3, ranging 50% or more. |
申请公布号 |
KR20130000409(A) |
申请公布日期 |
2013.01.02 |
申请号 |
KR20127026718 |
申请日期 |
2011.03.09 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KABE YOSHIRO;OTAO SHUICHIRO;SATO YOSHIHIRO |
分类号 |
H01L21/316;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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