Deposition of indium containing thin films using new indium precursors

摘要

A method for forming an indium containing thin film on a substrate comprising at least the steps of:
a) providing a vapor comprising at least one precursor compound of the formula (I): [(R a )(R b )ln(OR c )] 2 , wherein:
- Ra and Rb are independently selected in the group consisting of H, C1-C6 linear or branched alkyl, aryl or alkylsilyl;
- Rc is selected in the group consisting of C1-C4 linear or branched alkyl, aryl or alkylsilyl;
b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of an indium-containing complex on at least one surface of said substrate.