摘要 |
A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
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