发明名称 Technique for monitoring and controlling a plasma process with an ion mobility spectrometer
摘要 A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
申请公布号 US8344318(B2) 申请公布日期 2013.01.01
申请号 US20090556592 申请日期 2009.09.10
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;HADIDI KAMAL;LINDSAY BERNARD G. 发明人 HADIDI KAMAL;LINDSAY BERNARD G.
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址