发明名称 |
Single crystal growth method and single crystal pulling apparatus for improving yield and productivity of single crystal |
摘要 |
The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor.
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申请公布号 |
US8343275(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20080449878 |
申请日期 |
2008.02.28 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;MIYAHARA YUUICHI;IWASAKI ATSUSHI;ODA TETSUHIRO |
发明人 |
MIYAHARA YUUICHI;IWASAKI ATSUSHI;ODA TETSUHIRO |
分类号 |
C30B15/22 |
主分类号 |
C30B15/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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