发明名称 |
Semiconductor device having a nonvolatile memory cell with a cap insulating film formed over a selection gate electrode |
摘要 |
To provide a technique capable of improving reliability of a semiconductor device having a nonvolatile memory cell by suppressing the reduction of the drive force. A memory cell is configured by a selection pMIS having a selection gate electrode including a conductive film exhibiting a p-type conductivity and a memory pMIS having a memory gate electrode including a conductive film exhibiting a p-type conductivity, and at the time of write, hot electrons are injected into a charge storage layer from the side of a semiconductor substrate 1 and at the time of erase, hot holes are injected into the charge storage layer from the memory gate electrode.
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申请公布号 |
US8344444(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100699731 |
申请日期 |
2010.02.03 |
申请人 |
RENESAS ELECTRONICS CORPORATION;KAWASHIMA YOSHIYUKI;HARAGUCHI KEIICHI |
发明人 |
KAWASHIMA YOSHIYUKI;HARAGUCHI KEIICHI |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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