发明名称 |
Apparatus and method for doping |
摘要 |
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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申请公布号 |
US8344336(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113208581 |
申请日期 |
2011.08.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI SHUNPEI;HAMATANI TOSHIJI;TANAKA KOICHIRO |
发明人 |
YAMAZAKI SHUNPEI;HAMATANI TOSHIJI;TANAKA KOICHIRO |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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