发明名称 |
Semiconductor memory device correcting fuse data and method of operating the same |
摘要 |
A semiconductor memory device and method of operating same are described. The semiconductor memory device includes a first anti-fuse array having a plurality of first anti-fuse elements that store first fuse data, a second anti-fuse array having a plurality of second anti-fuse elements that store error correction code (ECC) data associated with the first fuse data, and an ECC decoder configured to generate second fuse data by correcting the first fuse data using the ECC data.
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申请公布号 |
US8345501(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113281762 |
申请日期 |
2011.10.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;JEONG BYUNG-HOON |
发明人 |
JEONG BYUNG-HOON |
分类号 |
G11C17/18;G11C7/00;G11C17/00 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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