发明名称 Light-emitting element and the manufacturing method thereof
摘要 A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.
申请公布号 US8344392(B2) 申请公布日期 2013.01.01
申请号 US201113106310 申请日期 2011.05.12
申请人 EPISTAR CORPORATION;YEH JUI HUNG;WANG CHUN KAI;YEN WEI YU;LIN YU YAO;SHEN CHIEN FU;KUO DE SHAN;KO TING CHIA 发明人 YEH JUI HUNG;WANG CHUN KAI;YEN WEI YU;LIN YU YAO;SHEN CHIEN FU;KUO DE SHAN;KO TING CHIA
分类号 H01L33/00;H01L21/00 主分类号 H01L33/00
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