发明名称 Fast gas switching plasma processing apparatus
摘要 A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
申请公布号 US8343876(B2) 申请公布日期 2013.01.01
申请号 US201113189416 申请日期 2011.07.22
申请人 LAM RESEARCH CORPORATION;SADJADI S. M. REZA;HUANG ZHISONG;SAM JOSE TONG;LENZ ERIC H.;DHINDSA RAJINDER 发明人 SADJADI S. M. REZA;HUANG ZHISONG;SAM JOSE TONG;LENZ ERIC H.;DHINDSA RAJINDER
分类号 H01L21/302;H01L21/306 主分类号 H01L21/302
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