发明名称 |
Fast gas switching plasma processing apparatus |
摘要 |
A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
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申请公布号 |
US8343876(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113189416 |
申请日期 |
2011.07.22 |
申请人 |
LAM RESEARCH CORPORATION;SADJADI S. M. REZA;HUANG ZHISONG;SAM JOSE TONG;LENZ ERIC H.;DHINDSA RAJINDER |
发明人 |
SADJADI S. M. REZA;HUANG ZHISONG;SAM JOSE TONG;LENZ ERIC H.;DHINDSA RAJINDER |
分类号 |
H01L21/302;H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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