发明名称 |
Semiconductor device and method of forming the same |
摘要 |
A method of forming a semiconductor device includes the following processes. A first pillar and a second pillar are formed on a semiconductor substrate. A semiconductor film is formed which includes first and second portions. The first portion is disposed over a side surface of the first pillar. The second portion is disposed over a side surface of the second pillar. The first and second portions are different from each other in at least one of impurity conductivity type and impurity concentration. A part of the semiconductor film is removed by etching back. The first and second portions are etched at first and second etching rates that are different from each other.
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申请公布号 |
US8343832(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100662958 |
申请日期 |
2010.05.13 |
申请人 |
ELPIDA MEMORY, INC.;NISHI HIRO;KAKEHASHI EIICHIROU |
发明人 |
NISHI HIRO;KAKEHASHI EIICHIROU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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