发明名称 |
Test circuit, nonvolatile semiconductor memory appratus using the same, and test method |
摘要 |
A test circuit of a nonvolatile semiconductor memory apparatus includes a first switching unit, a second switching unit, and a third switching unit. The first switching unit is configured to selectively interrupt application of a pumping voltage for a sense amplifier to a sense amplifier input node. The second switching unit is configured to selectively decouple the sense amplifier input node and a sub input/output node. The sub input/output node is coupled with a data storage region. The third switching unit is configured to selectively connect a voltage applying pad and the sense amplifier input node.
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申请公布号 |
US8345495(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100845659 |
申请日期 |
2010.07.28 |
申请人 |
SK HYNIX INC.;YOON JUNG HYUK;SHIN YOON JAE |
发明人 |
YOON JUNG HYUK;SHIN YOON JAE |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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