| 摘要 |
<p>PURPOSE: A phase change memory device and a manufacturing method thereof are provided to suppress the diffusion of boron by forming a nitride layer between a barrier metal layer and a p+ poly silicon layer. CONSTITUTION: A junction area(220) is formed on the upper side of a semiconductor substrate and is made of metal materials. A switching device is formed on the upper side of the junction area. A bottom electrode(271) is formed on the upper side of the switching device. A phase change layer(280) is formed on the upper side of the bottom electrode. A top electrode(290) is formed on the upper side of the phase change layer. The switching device is formed by laminating a barrier layer, a nitride layer, and a p+ polysilicon layer.</p> |
