THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to improve an electric property of a device by including source and drain electrodes with a constant pattern. CONSTITUTION: A gate electrode(20) is formed on an insulated transparent substrate. A gate insulation layer(30) is formed on the gate electrode. A semiconductor layer(40) is formed on the gate insulation layer and includes a channel region. A source electrode(50) and a drain electrode(60) are formed on the semiconductor layer. One of the source and drain electrodes is formed with a pattern including a plurality of slits and generates a fringe field.