MEMORY DEVICE AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A memory device and a semiconductor device are provided to secure high reliability by suppressing power consumption. CONSTITUTION: An input terminal of a first inverter is electrically connected to an output terminal of a first clocked inverter. An input terminal of a second clocked inverter is electrically connected to an output terminal of a first inverter. An output terminal of the second clocked inverter is electrically connected to the output terminal of the first clocked inverter and the input terminal of the first inverter. A source or a drain of a transistor(103) is electrically connected to the output terminal of the first clocked inverter, the input terminal of the first inverter, and the output terminal of the second clocked inverter. One of a capacitive element(102) is electrically connected to the other of the source or drain of the transistor.