发明名称 |
NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION |
摘要 |
A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.
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申请公布号 |
US2012331210(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213526794 |
申请日期 |
2012.06.19 |
申请人 |
JEONG JAEYONG;LEE JU SEOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAEYONG;LEE JU SEOK |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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