| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device that can hold the memory content even under no power supply circumstances, and that allows readout of stored data at high speed without turning on a transistor included in a memory element. <P>SOLUTION: In a memory device, a node is formed by electrically connecting a capacitor element and a memory cell including a holding capacitor element and a transistor having an oxide semiconductor layer as a channel region. The node is boosted according to the holding data by the capacitive coupling via the holding capacitor element, and by reading out this potential with an amplification circuit, the data can be identified. <P>COPYRIGHT: (C)2013,JPO&INPIT |
