摘要 |
An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices. |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;BYL, OLEG;XU, CHONGYING;HUNKS, WILLIAM;RAY, RICHARD, S. |
发明人 |
BYL, OLEG;XU, CHONGYING;HUNKS, WILLIAM;RAY, RICHARD, S. |