发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stable operation even though a transistor is a depletion type. <P>SOLUTION: A semiconductor device according to an aspect of the present invention includes: a first transistor having a function of supplying a first potential to a first wire; a second transistor having a function of supplying a second potential to the first wire; a third transistor having a function of, after supply of a third potential for turning on the first transistor to a gate of the first transistor, stopping the supply of the third potential; a fourth transistor having a function of supplying the second potential to the gate of the first transistor; and a first circuit having a function of generating a second signal obtained by offsetting the first signal. A second signal is input to a gate of the fourth transistor, and the minimal value of the second signal is less than the second potential. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012257211(A) 申请公布日期 2012.12.27
申请号 JP20120108073 申请日期 2012.05.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 UMEZAKI ATSUSHI
分类号 H03K19/0944;G09G3/20;G09G3/30;G09G3/36;G11C19/00;G11C19/28;H01L27/08 主分类号 H03K19/0944
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