MEMORY ELEMENT AND SIGNAL PROCESSING CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory element having a novel configuration, and a signal processing circuit using the memory element.

SOLUTION: A memory element includes a first circuit and a second circuit. The first circuit includes a first transistor and a second transistor. The second circuit includes a third transistor and a fourth transistor. A signal potential corresponding to a first signal is input to a gate of the second transistor via the first transistor which is in an on state. A signal potential corresponding to a second signal is input to a gate of the fourth transistor via the third transistor which is in an on state. After that, the first transistor and the third transistor are turned off. The first signal is read out using both of the state of the second transistor and the state of the fourth transistor. The first transistor and the third transistor are transistors including oxide semiconductor layers in which channels are formed.

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