| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which has interface characteristics excellent in both interface state density and flat band voltage. <P>SOLUTION: A semiconductor device manufacturing method comprises: first, cleansing a surface of a silicon carbide substrate 1 (step S1); subsequently, growing a silicon nitride film 2 on the surface of the silicon carbide substrate 1 by generating ECR plasma from a material gas and irradiating atoms contained in the material gas to the silicon carbide substrate 1 (step S2); subsequently, depositing a silicon oxide film 3 on a surface of a silicon nitride film 2 by ECR plasma chemical vapor deposition (step S3); and subsequently, performing an annealing treatment in a nitrogen atmosphere on the silicon carbide substrate 1 on which the silicon nitride film 2 and the silicon oxide film 3 are formed (step S4). <P>COPYRIGHT: (C)2013,JPO&INPIT |
