发明名称 |
LOW-PROFILE LOCAL INTERCONNECT AND METHOD OF MAKING THE SAME |
摘要 |
Embodiments of the present invention provide a structure. The structure includes a plurality of field-effect-transistors having gate stacks formed on top of a semiconductor substrate, the gate stacks having spacers formed at sidewalls thereof; and one or more conductive contacts formed directly on top of the semiconductor substrate and interconnecting at least one source/drain of one of the plurality of field-effect-transistors to at least one source/drain of another one of the plurality of field-effect-transistors, wherein the one or more conductive contacts is part of a low-profile local interconnect that has a height lower than a height of the gate stacks. |
申请公布号 |
US2012326237(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201113169081 |
申请日期 |
2011.06.27 |
申请人 |
PONOTH SHOM;HORAK DAVID V.;KOBURGER, III CHARLES W.;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PONOTH SHOM;HORAK DAVID V.;KOBURGER, III CHARLES W.;YANG CHIH-CHAO |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|