发明名称
摘要 <P>PROBLEM TO BE SOLVED: To manufacture a porous silicon carbide sintered compact having little variation and a desired average largeness of pore diameters. <P>SOLUTION: A method for manufacturing the porous silicon carbide sintered compact having little variation and a desired average largeness of pore diameters includes a forming step of producing a silicon carbide formed body using a raw material composition containing at least silicon carbide powders, silicon powders and a binder, a defatting step of producing a silicon carbide defatted body by the defatting treatment of the silicon carbide formed body and a burning step of producing the porous silicon carbide sintered compact by the burning treatment of the porous silicon carbide defatted body. It is characterized in that the content of the silicon powders in the raw material composition is 1-3 wt.% in the total amount of the silicon carbide powder and the silicon powder and that the burning treatment in the burning step is performed at a temperature so that each silicon carbide powder can form a neck between particles by mutual diffusion. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP5111139(B2) 申请公布日期 2012.12.26
申请号 JP20080026491 申请日期 2008.02.06
申请人 发明人
分类号 C04B38/00;B01D39/00;B01D39/20;B01D53/86;B01J35/04;C04B35/573 主分类号 C04B38/00
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