PURPOSE: A method for forming a pattern is provided to smoothly form scallops of a sidewall by forming a pattern using a deep reactive ion etching. CONSTITUTION: A mask pattern(220a) is formed on a substrate(210). A sub mask pattern is formed on the sidewall of the mask pattern. The substrate is etched with a deep reactive ion etching method. A part of the mask pattern is removed to expose a part of the upper surface of the substrate. The exposed upper surface of the substrate is etched.
申请公布号
KR20120138263(A)
申请公布日期
2012.12.26
申请号
KR20110057604
申请日期
2011.06.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, DONG KWON;KIM, KI IL;CHEON, AH YOUNG;KIM, MYEONG CHEOL;KIM, YONG JIN