发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
A semiconductor device includes: a plurality of external terminals; a plurality of semiconductor substrates that are layered; a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals; and a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates. In the device, the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits. |
申请公布号 |
US8338890(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20090627652 |
申请日期 |
2009.11.30 |
申请人 |
SAIKI TAKAYUKI;SATO SHINYA;TAKAMIYA HIROYUKI;SEIKO EPSON CORPORATION |
发明人 |
SAIKI TAKAYUKI;SATO SHINYA;TAKAMIYA HIROYUKI |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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