Semiconductor device with (110)-oriented silicon

摘要

A vertical semiconductor device includes a bottom metal layer and a first P-type semiconductor layer overlying the bottom metal layer. The first P-type semiconductor layer is characterized by a surface crystal orientation of (110) and a first conductivity. The first P-type semiconductor layer is heavily doped. The vertical semiconductor device also includes a second P-type semiconductor layer overlying the first P-type semiconductor layer. The second semiconductor layer has a surface crystal orientation of (110) and is characterized by a lower conductivity than the first conductivity. The vertical semiconductor device also has a top metal layer overlying the second P-type semiconductor layer. A current conduction from the top metal layer to the bottom metal layer and through the second p-type semiconductor layer is characterized by a hole mobility along a <110> crystalline orientation and on (110) crystalline plane.