发明名称 Joint structure, joining material, and method for producing joining material containing bismuth
摘要 The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
申请公布号 US8338966(B2) 申请公布日期 2012.12.25
申请号 US201013003024 申请日期 2010.06.17
申请人 FURUSAWA AKIO;SAKATANI SHIGEAKI;KITAURA HIDETOSHI;NAKAMURA TAICHI;MATSUO TAKAHIRO;PANASONIC CORPORATION 发明人 FURUSAWA AKIO;SAKATANI SHIGEAKI;KITAURA HIDETOSHI;NAKAMURA TAICHI;MATSUO TAKAHIRO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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