发明名称 Semiconductor memory apparatus and method of driving bit-line sense amplifier
摘要 Disclosed is a semiconductor memory apparatus which improves the time to transmit write data to a memory cell and improves data retention time of the memory cell. To this end, the semiconductor memory apparatus includes a bit-line sense amplifier that senses and amplifies data of bit-line pairs by driving power supplied through a pull up power line and a pull down power line and transmits the amplified data to a memory cell. A bit-line sense amplification power supply unit supplies pull up driving voltage and pull down driving voltage to the pull up and pull down power lines in an active mode and supplies an over driving voltage and the pull down driving voltage having a higher voltage level than the pull up driving voltage to the pull up and pull down power lines until the memory cell is deactivated in a precharge mode.
申请公布号 US8339872(B2) 申请公布日期 2012.12.25
申请号 US20090648983 申请日期 2009.12.29
申请人 YUN TAE-SIK;LEE JAE-JIN;HYNIX SEMICONDUCTOR INC. 发明人 YUN TAE-SIK;LEE JAE-JIN
分类号 G11C7/00;G11C5/14;G11C7/02 主分类号 G11C7/00
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