发明名称 |
GaN single crystal substrate and method for processing surface of GaN single crystal substrate |
摘要 |
The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on a support bed; radiating light having wavelengths ranging from 370 to 800 nanometers (nm) onto the planarized gallium nitride original substrate; measuring transmittance of the gallium nitride original substrate; and confirming whether the transmittance is within the range of 65 to 90%. A gallium nitride single crystal substrate obtained through the method of processing the surface has high transmittance ranging from 65 to 90% measured using light having wavelengths of 370 to 800 nm. The thickness ratio (DLa/DLb) of the damage layers on the both sides of the gallium nitride single crystal substrate can be obtained within the range of 0.99 to 1.01. |
申请公布号 |
US8337614(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20070978547 |
申请日期 |
2007.10.29 |
申请人 |
JEONG JIN SUK;LEE KI SOO;KIM KYOUNG JUN;LEE JU HEON;JIN CHANG UK;SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
发明人 |
JEONG JIN SUK;LEE KI SOO;KIM KYOUNG JUN;LEE JU HEON;JIN CHANG UK |
分类号 |
C30B29/38;C30B33/00;H01L33/32 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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