发明名称 |
Methods of forming a metal contact on a silicon substrate |
摘要 |
A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.
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申请公布号 |
US8338275(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201113172035 |
申请日期 |
2011.06.29 |
申请人 |
ABBOTT MALCOLM;KRAY DANIEL;INNOVALIGHT, INC. |
发明人 |
ABBOTT MALCOLM;KRAY DANIEL |
分类号 |
H01L21/20;B82Y30/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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