发明名称 |
Nonvolatile memory devices that utilize dummy word line segments to inhibit dishing during fabrication |
摘要 |
A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction. |
申请公布号 |
US8339859(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201213404335 |
申请日期 |
2012.02.24 |
申请人 |
PARK JANG-HO;PARK JAE-KWAN;KWAK DONG-HWA;JIN SO-WI;HWANG BYUNG-JUN;LIM NAM-SU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JANG-HO;PARK JAE-KWAN;KWAK DONG-HWA;JIN SO-WI;HWANG BYUNG-JUN;LIM NAM-SU |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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