NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EMITTING EFFICIENCY AND METHOD OF MANUFACTURING THE NITRIDE BASED LIGHT EMITTING DEVICE
摘要
PURPOSE: A nitride based light emitting device with excellent light emitting efficiency and a manufacturing method thereof are provided to disperse a movement route of a carrier by forming an active layer in the state an uneven portion is formed in a top surface of a first conductivity type nitride layer. CONSTITUTION: A first conductivity type nitride layer(220) is formed on a substrate. The first conductivity type nitride layer comprises an uneven portion. The uneven portion has a plurality of protrusion portions and main portions on a top surface. An active layer(230) is formed on the first conductivity type nitride layer. A second conductivity type nitride layer(240) is formed on the active layer. [Reference numerals] (201) Substrate; (210) Buffer layer; (230) Active layer
申请公布号
KR20120138048(A)
申请公布日期
2012.12.24
申请号
KR20110057315
申请日期
2011.06.14
申请人
SEMIMATERIALS. CO., LTD.;PARK, KUN
发明人
KIM, SUN MO;OH, CHUNG SEOK;HWANG, SE KWANG;SONG, HO GEUN;WON, JUN HO;PARK, JI SU;PARK, KUN