发明名称 NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EMITTING EFFICIENCY AND METHOD OF MANUFACTURING THE NITRIDE BASED LIGHT EMITTING DEVICE
摘要 PURPOSE: A nitride based light emitting device with excellent light emitting efficiency and a manufacturing method thereof are provided to disperse a movement route of a carrier by forming an active layer in the state an uneven portion is formed in a top surface of a first conductivity type nitride layer. CONSTITUTION: A first conductivity type nitride layer(220) is formed on a substrate. The first conductivity type nitride layer comprises an uneven portion. The uneven portion has a plurality of protrusion portions and main portions on a top surface. An active layer(230) is formed on the first conductivity type nitride layer. A second conductivity type nitride layer(240) is formed on the active layer. [Reference numerals] (201) Substrate; (210) Buffer layer; (230) Active layer
申请公布号 KR20120138048(A) 申请公布日期 2012.12.24
申请号 KR20110057315 申请日期 2011.06.14
申请人 SEMIMATERIALS. CO., LTD.;PARK, KUN 发明人 KIM, SUN MO;OH, CHUNG SEOK;HWANG, SE KWANG;SONG, HO GEUN;WON, JUN HO;PARK, JI SU;PARK, KUN
分类号 H01L33/22 主分类号 H01L33/22
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