| 摘要 |
<p>In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner, a sense region is provided with a first region in which a distance from an end of a main cathode region on a side of the sense region in a plan view of the semiconductor substrate is equal to or longer than 615 μm. Alternatively, in order to obtain a sufficiently large sense diode current in a stable manner, the sense region is provided with a second region in which a distance from the main cathode region in a plan view of the semiconductor substrate is equal to or shorter than 298 μm. The sense region may be provided with both the first region and the second region.</p> |
