发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
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申请公布号 |
US2012322188(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213523571 |
申请日期 |
2012.06.14 |
申请人 |
MAENG JONG SUN;PARK KI HO;KIM BUM JOON;RYU HYUN SEOK;LEE JUNG HYUN;KIM BOUNG KYUN;KIM KI SUNG;YOON SUK HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MAENG JONG SUN;PARK KI HO;KIM BUM JOON;RYU HYUN SEOK;LEE JUNG HYUN;KIM BOUNG KYUN;KIM KI SUNG;YOON SUK HO |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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