THICK FILM PASTE CONTAINING BISMUTH-BASED OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
摘要
<p>The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-based oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.</p>
申请公布号
WO2012173875(A1)
申请公布日期
2012.12.20
申请号
WO2012US41412
申请日期
2012.06.07
申请人
E. I. DU PONT DE NEMOURS AND COMPANY;HANG, KENNETH, WARREN;WANG, YUELI
