SOLUTION FOR REMOVING PLASMA ETCHING RESIDUE

摘要

A solution for removing plasma etching residue, which comprises: (a) organic solvent 5wt%~75wt%; (b) water 10wt%~50wt%; (c) fluoride 0.1wt%~20wt%; (d) organic amine 0.1wt%~20wt%; (e) amino acid 0.1wt%~10wt%; and (f) Guanidine 0.01wt%~5wt%. The solution composition effectively removes plasma etching residue during the semiconductor manufacturing process.