发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 In a writing operation, a control circuit raises the voltage of a writing-prohibited bit line among a plurality of bit lines to a first voltage, and thereafter brings the writing-prohibited bit line into a floating state. Then, the control circuit raises the voltage of a writing bit line other than the writing-prohibited bit line to a second voltage. In this way, the control circuit prohibits writing into a memory transistor corresponding to the writing-prohibited bit line. On the other hand, the control circuit executes writing into a memory transistor corresponding to the writing bit line.
申请公布号 US2012320677(A1) 申请公布日期 2012.12.20
申请号 US201213420767 申请日期 2012.03.15
申请人 MAEJIMA HIROSHI;HOSONO KOJI;KABUSHIKI KAISHA TOSHIBA 发明人 MAEJIMA HIROSHI;HOSONO KOJI
分类号 G11C16/10 主分类号 G11C16/10
代理机构 代理人
主权项
地址