| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve breakdown voltage. <P>SOLUTION: A semiconductor device comprises: an n- type diffusion region to be a drain region formed in an n- type semiconductor region; a p type diffusion region formed so as to surround the n- type diffusion region; an n+ type diffusion region to be a source region formed in the p type diffusion region; a p- type buried layer 13 formed right below the n- type diffusion region; an n+ type diffusion region to which a high potential is to be applied formed in the n- type semiconductor region; an electrode formed on a surface of the n+ type diffusion region; a drain electrode electrically connected with the electrode by wiring 20; a trench 3a reaching the p- type buried layer 13 formed at a part located right below the wiring 20; and a polysilicon film 81 buried in the trench 3a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
