发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage. |
申请公布号 |
US2012319136(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213581497 |
申请日期 |
2012.02.06 |
申请人 |
NOBORIO MASATO;YAMAMOTO KENSAKU;MATSUKI HIDEO;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI;WATANABE YUKIHIKO;TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
NOBORIO MASATO;YAMAMOTO KENSAKU;MATSUKI HIDEO;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI;WATANABE YUKIHIKO |
分类号 |
H01L29/24;H01L21/336 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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